Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral
We propose a simple model, derived here from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET).The Pao-Sah double integral is decomposed into single integrals with limits of integration calculated from Taylor polynomials quadruple topical oi